Novel dual material gate carbon nanotube field-effect transistor based on stepwise doping profile channel

Abstract

In this work, a novel type of dual material gate carbon nanotube filed-effect transistor, with stepwise doping profile channel (SDC-DMG-CNTFET) is proposed, and simulated using with self-consistent solution of the two dimensional Poisson-Schrodinger equation, within the non-equilibrium Green's function (NEGF) formalism. The doping concentration of SDC-DMG… (More)

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