Novel VCO Architecture Using Series Above-IC FBAR and Parallel LC Resonance

@article{stman2006NovelVA,
  title={Novel VCO Architecture Using Series Above-IC FBAR and Parallel LC Resonance},
  author={Kim B. {\"O}stman and Sami Sipil{\"a} and Ivan S. Uzunov and Nikolay T. Tchamov},
  journal={IEEE Journal of Solid-State Circuits},
  year={2006},
  volume={41},
  pages={2248-2256}
}
A quasi-monolithic voltage-tunable film bulk acoustic resonator (FBAR) enhanced oscillator for 2.1 GHz in 0.25-mum SiGe BiCMOS technology is designed, fabricated, and evaluated. The narrow-band FBAR was built above the SiGe circuit through later Si post-processing steps. The oscillator is based on a two-transistor loop structure and uses two resonators, namely a parallel LC tank and an above-IC FBAR in its series-resonant mode. The improvement in phase noise performance is significant compared… 
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