Novel Snapback-Free Reverse-Conducting SOI-LIGBT With Dual Embedded Diodes

@article{Zhang2017NovelSR,
  title={Novel Snapback-Free Reverse-Conducting SOI-LIGBT With Dual Embedded Diodes},
  author={Long Zhang and Jing Zhu and Weifeng Sun and Meng Chen and Minna Zhao and Xuequan Huang and Jiajun Chen and Yuxiang Qian and Longxing Shi},
  journal={IEEE Transactions on Electron Devices},
  year={2017},
  volume={64},
  pages={1187-1192}
}
A novel 500 V reverse-conducting (RC) silicon-on-insulator lateral insulated gate bipolar transistor (SOI-LIGBT) with dual embedded diodes (DEDs) is proposed to eliminate the snapback, and its mechanism is investigated by simulation. The RC is realized by the internal diode, which consists of two p-i-n diodes (D1 and D2). The two diodes are connected in series. In the RC-state, the current flows through D1 first and then through D2. D2 is embedded in the anode region of the proposed DED-LIGBT… CONTINUE READING

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