Novel Slope Detection Technique for Robust STRAM Sensing

  • Published 2016

Abstract

Spin Torque Transfer Random Access Memory (STRAM) is a promising memory technology for embedded cache due to its highdensity, low standby power, and high speed. STTRAM provides high density due to the 1T– 1R structure and eliminates bit-cell leakage due to the non-volatile nature of the storage element (MTJ). The process variation of MTJ and access… (More)

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