Novel Semiconductor Laser with Dual-wavelength Cascaded by Tunnel Junction

@inproceedings{Desu2003NovelSL,
  title={Novel Semiconductor Laser with Dual-wavelength Cascaded by Tunnel Junction},
  author={Zou De-su},
  year={2003}
}
A novel semiconductor laser is proposed which could have multiwavelength cascaded by tunnel junction, and a dual-wavelength semiconductor which has two active regions is grown by MOCVD with GaAs as tunnel junction and InGaAs strain quantum well as the active regions. A ridge structure of 90 μm stripe width is fabricated. The measurement results show that the laser can have two lasing wavelengths, 951nm and 986nm, the slop efficiency reaches 1 12 W/A without coating, and the far-field FWHM are… CONTINUE READING