Novel Powerful Comprehensive Analytical Probabilistic Model of Random Variation in Subthreshold MOSFET ’ s Performance

In this research, the novel comprehensive probabilistic analytical model of the subthreshold MOSFET’s performance affected by both random dopant fluctuation and process variation effects has been proposed. The up to dated Takeuchi’s physical level random variation model has been adopted. The proposed model has been found to be analytic, powerful and… CONTINUE READING