Novel Lithography-Independent Pore Phase Change Memory

@article{Breitwisch2007NovelLP,
  title={Novel Lithography-Independent Pore Phase Change Memory},
  author={M. Breitwisch and T. Nirschl and C. Chen and Y. Zhu and M. Lee and M. Lamorey and G. Burr and E. A. Joseph and A. Schrott and J. Philipp and R. Cheek and T. D. Happ and S. Chen and S. Zaidr and P. Flaitz and J. Bruley and R. Dasaka and B. Rajendran and S. Rossnage and M. Yang and Y. C. Chen and R. Bergmann and H. Lung and C. Lam},
  journal={2007 IEEE Symposium on VLSI Technology},
  year={2007},
  pages={100-101}
}
  • M. Breitwisch, T. Nirschl, +21 authors C. Lam
  • Published 2007
  • Engineering, Materials Science
  • 2007 IEEE Symposium on VLSI Technology
  • We have successfully demonstrated a novel "pore" phase change memory cell, whose critical dimension (CD) is independent of lithography. Instead, the pore diameter is accurately defined by intentionally creating a "keyhole" with conformal deposition. Fully integrated 256 kbit test chips have been fabricated in 180nm CMOS technology. We report SET times of 80 ns, RESET currents less than 250 muA, and accurate sub-lithographic CDs that can be less than 20% the size of the lithographically -defined… CONTINUE READING

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