Novel InGaP/AlGaAs/InGaAs heterojunction FET for X-Ku band power applications

@article{Okamoto1997NovelIH,
  title={Novel InGaP/AlGaAs/InGaAs heterojunction FET for X-Ku band power applications},
  author={Yasuhiro Okamoto and Kenji Matsunaga and Masayuki Kuzuhara and M. Kanamori},
  journal={1997 IEEE MTT-S International Microwave Symposium Digest},
  year={1997},
  volume={3},
  pages={1191-1194 vol.3}
}
We have successfully fabricated a novel heterojunction FET (HJFET) with an InGaP surface layer for high yield X-Ku band power applications. Standard deviation in the threshold voltage of 60 mV was achieved by using a highly-selective wet recess etching technique. The fabricated HJFET (Wg=16.8 mm) delivered an output power of 9.5 W and a power-added efficiency of 35% with a low carrier-to-third-order intermodulation distortion ratio of -29.5 dBc at 12 GHz. Moreover, the 25.2 mm HJFET delivered… CONTINUE READING

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