Novel GAA raised source / drain sub-10-nm poly-Si NW channel TFTs with self-aligned corked gate structure for 3-D IC applications

@article{Lu2011NovelGR,
  title={Novel GAA raised source / drain sub-10-nm poly-Si NW channel TFTs with self-aligned corked gate structure for 3-D IC applications},
  author={Y. Lu and Po-Yi Kuo and Yi-hong Wu and Yi-Hsuan Chen and Tien-Sheng Chao},
  journal={2011 Symposium on VLSI Technology - Digest of Technical Papers},
  year={2011},
  pages={142-143}
}
A novel gate-all-around raised source / drain sub-10-nm poly-Si nanowire (NW) channel TFTs with self-aligned corked gate structure (GAA RSDNW-TFTs) have been successfully demonstrated. It is through the use of a novel fabrication process requiring no advanced lithographic tools. The corked gate (CG) structure, only the poly gate pattern was etched, reduces complex of process significantly. For the first time, several properties of this 3D architecture are explored: (i) the Si NW dimension is… CONTINUE READING

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