Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

Abstract

Recently, two-dimensional materials such as molybdenum disulphide (MoS2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5-20 cm(2)/V · s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on… (More)
DOI: 10.1038/srep05951

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Cite this paper

@inproceedings{Tian2014NovelFS, title={Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions}, author={He Tian and Zhen Han Tan and Can Wu and Xiaomu Wang and Mohammad Ali Mohammad and Dan Xie and Yi Yang and Jing Wang and Lain-Jong Li and Jun Xu and Tian-ling Ren}, booktitle={Scientific reports}, year={2014} }