Novel Co/Ni bi-layer salicidation for 45 nm gate technology

Abstract

We present the novel concept of "bi-layer metal salicidation" by using Co/Ni stacked films, which showed better film chemical and plasma resistance than pure NiSi. NFET device performance demonstrates 5% Idsat/Ioff (100 nA) improvement and no degradation in terms of sheet resistance, junction leakage and isolation than pure NiSi. We also prove the approach… (More)

1 Figure or Table

Topics

  • Presentations referencing similar topics