Novel Boosted-Voltage Sensing Scheme for Variation-Resilient STT-MRAM Read

@article{Quang2016NovelBS,
  title={Novel Boosted-Voltage Sensing Scheme for Variation-Resilient STT-MRAM Read},
  author={Kien Trinh Quang and Sergio Ruocco and Massimo Alioto},
  journal={IEEE Transactions on Circuits and Systems I: Regular Papers},
  year={2016},
  volume={63},
  pages={1652-1660}
}
This paper proposes a novel boosted voltage sensing (BVS) scheme that substantially improves the resiliency of STT-MRAMs against variations in read accesses based on bitline voltage sensing, and on a wide range of voltages. The BVS scheme mitigates the impact of variations in the senseamp and the reference voltage generation, and is based on switched-capacitor voltage boosters. The related area-performance-energy-resiliency tradeoff is explored, and design guidelines are derived to improve the… CONTINUE READING