Nonvolatile unipolar memristive switching mechanism of pulse laser ablated NiO films


Memristive unipolar switching characteristics of PLD grown NiO films have been investigated for nonvolatile memory applications. Grazing incidence XRD study reveals the polycrystalline behavior of NiO films. AFM topography shows a smooth surface of NiO having RMS roughness ∼ 3.0 nm. By applying a proper voltage bias and compliance, Pt/NiO/Pt… (More)


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