Nonvolatile memory characteristics of WSi2 nanocrystals embedded in SiO2 dielectrics.

Abstract

A nano-floating gate capacitor with WSi2 nanocrystals embedded in SiO2 dielectrics was fabricated. The WSi2 nanocrystals were created from ultrathin WSi2 film during rapid thermal annealing process and their average size and density were about 2.5 nm and 3.59 x 10(12) cm(-2), respectively. The flat-band voltage shift due to the carrier charging effect of… (More)

Topics

  • Presentations referencing similar topics