Nonvolatile Multilevel States in Multiferroic Tunnel Junctions

@article{Fang2019NonvolatileMS,
  title={Nonvolatile Multilevel States in Multiferroic Tunnel Junctions},
  author={M. Fang and Sangjian Zhang and Wen-Chao Zhang and L. Jiang and Eric W. Vetter and H. Lee and X. Xu and Dali Sun and J. Shen},
  journal={arXiv: Materials Science},
  year={2019}
}
  • M. Fang, Sangjian Zhang, +6 authors J. Shen
  • Published 2019
  • Materials Science, Physics
  • arXiv: Materials Science
  • Manipulation of tunneling spin-polarized electrons via a ferroelectric interlayer sandwiched between two ferromagnetic electrodes, dubbed Multiferroic Tunnel Junctions (MFTJs), can be achieved not only by the magnetic alignments of two ferromagnets but also by the electric polarization of the ferroelectric interlayer, providing great opportunities for next-generation multi-state memory devices. Here we show that a La0.67Sr0.33MnO3 (LSMO)/PbZr0.2Ti0.8O3(PZT)/Co structured MFTJ device can exhibit… CONTINUE READING
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