Nonvolatile Floating-Gate Memories Based on Stacked Black Phosphorus–Boron Nitride–MoS2 Heterostructures

@inproceedings{Li2015NonvolatileFM,
  title={Nonvolatile Floating-Gate Memories Based on Stacked Black Phosphorus–Boron Nitride–MoS2 Heterostructures},
  author={Dong Li and Xiaojuan Wang and Qichong Zhang and Liping Zou and Xiangfan Xu and Zengxing Zhang},
  year={2015}
}
Research on van der Waals heterostructures based on stacked 2D atomic crystals is intense due to their prominent properties and potential applications for flexible transparent electronics and optoelectronics. Here, nonvolatile memory devices based on floating-gate field-effect transistors that are stacked with 2D materials are reported, where few-layer black phosphorus acts as channel layer, hexagonal boron nitride as tunnel barrier layer, and MoS2 as charge trapping layer. Because of the… CONTINUE READING

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