Nonstoichiometric doping and Bi antisite defect in single crystal Bi2Se3

@article{Huang2012NonstoichiometricDA,
  title={Nonstoichiometric doping and Bi antisite defect in single crystal Bi2Se3},
  author={Fei-ting Huang and M.-W. Chu and H.-H. Kung and W. L. Lee and Raman Sankar and Sz-Chian Liou and K. K. Wu and Y. K. Kuo and Fangcheng Chou},
  journal={Physical Review B},
  year={2012},
  volume={86}
}
We studied the defects of Bi2Se3 generated from Bridgman growth of stoichiometric and nonstoichiometric self-fluxes. Growth habit, lattice size, and transport properties are strongly affected by the types of defects generated. Major defect types of the BiSe antisite and partial Bi2-layer intercalation are identified through combined studies of direct atomic-scale imaging with scanning transmission electron microscopy in conjunction with energy-dispersive x-ray spectroscopy, x-ray diffraction… 

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