Nonradiative electron-hole recombination by a low-barrier pathway in hydrogenated silicon semiconductors

  • Zhang, Branz
  • Published 2000 in Physical review letters

Abstract

A microscopic pathway for nonradiative electron-hole recombination by large structural reconfiguration in hydrogenated Si is found with first-principles calculations. Trapped-biexciton formation leads to a low-barrier reconfiguration of the H atom, accompanied by crossing of doubly occupied electron and hole levels in the band gap. This crossing represents… (More)

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