Nonmagnetic compensation in ferromagnetic Ga1−xMnxAs and Ga1−xMnxP synthesized by ion implantation and pulsed-laser melting

@article{Scarpulla2008NonmagneticCI,
  title={Nonmagnetic compensation in ferromagnetic Ga1−xMnxAs and Ga1−xMnxP synthesized by ion implantation and pulsed-laser melting},
  author={Michael A. Scarpulla and Peter R. Stone and Ian D. Sharp and Eugene E. Haller and Oscar D. Dubon and Jeffrey W. Beeman and Kin Man Yu},
  journal={Journal of Applied Physics},
  year={2008},
  volume={103},
  pages={123906}
}
The electronic and magnetic effects of intentional compensation with non-magnetic donors are investigated in the ferromagnetic semiconductors Ga1-xMnxAs and Ga1-xMnxP synthesized using ion implantation and pulsed-laser melting (II-PLM). It is demonstrated that compensation with non-magnetic donors and MnI have similarqualitative effects on materials properties. With compensation TC decreases, resistivity increases, and stronger magnetoresistance and anomalous Hall effect attributed to skew… Expand
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