Nonlinear characteristics of on-chip spiral inductors under high RF power


This paper explores silicon CMOS on-chip spiral inductors performance degradation under high RF power. A novel methodology to calibrate and characterize on-chip spiral inductor with large signal inputs (high/ medium power) is presented. Experiments showed 12% degradation of quality factor in a particular inductor design when 34 dBm RF power was applied. The… (More)
DOI: 10.1016/j.mejo.2010.10.001


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