Nonlinear Design of a C band Power Amplifier using EEHEMT Nonlinear Model

@article{Dhar2007NonlinearDO,
  title={Nonlinear Design of a C band Power Amplifier using EEHEMT Nonlinear Model},
  author={J. Dhar and S. K. Garg and R. K. Arora and S. S. Rana},
  journal={2007 International Symposium on Signals, Circuits and Systems},
  year={2007},
  volume={1},
  pages={1-4}
}
This paper illustrates the nonlinear design of a single stage C band power amplifier. EEHEMT nonlinear model of the Eudyna MESFET device FLM5359-4F has been used for the single carrier nonlinear design of the amplifier. Paper covers all aspects related to nonlinear design of a power amplifier viz. description of nonlinear model, nonlinear design using loadpull technique, simulation and optimization followed by comparison of simulated and measured performance of the amplifier. 
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References

SHOWING 1-6 OF 6 REFERENCES
High-Power GaAs FET Amplifiers
  • 98
Microwave Transistor Amplifiers: Analysis and Design
  • 1,348
Comparison of non-linear MESFET models over 1-12 GHz frequency range and -25/spl deg/C to 105/spl deg/C temperature range
  • 5
  • PDF
ADS Documentation, user manuals
  • Version ADS2005A.
  • 2005