Nonhysteretic behavior inside the hysteresis loop of VO2 and its possible application in infrared imaging

@article{Gurvitch2009NonhystereticBI,
  title={Nonhysteretic behavior inside the hysteresis loop of VO2 and its possible application in infrared imaging},
  author={Michael Gurvitch and Serge Luryi and A. J. Polyakov and Alexander Shabalov},
  journal={Journal of Applied Physics},
  year={2009},
  volume={106},
  pages={104504}
}
In the resistive phase transition in VO 2 , temperature excursions taken from points on the major hysteresis loop produce minor loops. For sufficiently small excursions these minor loops degenerate into single-valued, nonhysteretic branches NHBs linear in log versus T and having essentially the same or even higher temperature coefficient of resistance TCR as the semiconducting phase at room temperature. We explain this behavior based on the microscopic picture of percolating phases. Similar… 

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TLDR
The abrupt first-order metal-insulator phase transition in single-crystal vanadium dioxide nanowires (NWs) is engineered to be a gradual transition by axially grading the doping level of tungsten, yielding an extremely high temperature coefficient of resistivity ~10%/K and a very low resistivity down to 0.001 Ω·cm.

References

SHOWING 1-10 OF 51 REFERENCES

Non-hysteretic branches inside the hysteresis loop in VO2 films for focal plane array imaging bolometers

In the resistive phase transition in VO2, temperature excursions from points on the major hysteresis loop produce minor loops. We have found that for sufficiently small excursions these minor loops

Figures of merit and optimization of a VO 2 microbolometer with strong electrothermal feedback

The influence of electrothermal feedback and hysteresis on the operation conditions, noise, and performance of a VO2 transition-edge microbolometer has been evaluated. The material undergoes a

Thermal dynamics of VO2 films within the metal–insulator transition: Evidence for chaos near percolation threshold

The thermal dynamics of thin vanadium dioxide films at the martensitic metal–insulator phase transition has been evaluated experimentally by thermal excitation spectroscopy. Over the transition

First-order reversal curve measurements of the metal-insulator transition in VO 2 : Signatures of persistent metallic domains

We have performed first order reversal curve measurements of the temperature-driven metal-insulator transition in VO$_2$ thin films, which enable quantitative analysis of the hysteresis behavior. An

VO2 films with strong semiconductor to metal phase transition prepared by the precursor oxidation process

We describe a relatively simple, reliable, and reproducible preparation technique, the precursor oxidation process, for making VO2 films with strong semiconductor-to-metal phase transition.

Nano-vanadium oxide thin films in mixed phase for microbolometer applications

Among the several phases of vanadium oxide, mixed phases of VO2 and V2O5 are preferred for uncooled micro-bolometers with low noise. The aim of this investigation is to achieve mixed phase VO2 and

Micromachined uncooled VO2-based IR bolometer arrays

Bulk silicon micromachined IR bolometer detectors operating at room temperature are presented. These devices are based on VO2 films typically exhibiting a thermal coefficient of resistance of the

Electronic Properties of V O 2 near the Semiconductor-Metal Transition

Optical, thermal, magnetic, and transport properties of V${\mathrm{O}}_{2}$ in the vicinity of the semiconductor-metal transition temperature of 68\ifmmode^\circ\else\textdegree\fi{}C are discussed

Optical properties of vanadium dioxide films on suitable infrared transmitting substrates

Vanadium dioxide undergoes a semiconductor to metal phase transition at approximately 68 degrees C which is accompanied by a marked change in material conductivity and an associated change in optical

Monolithic two-dimensional arrays of micromachined microstructures for infrared applications

Small micromachined structures (typically 10/sup -5/ cm/sup 2/) have been fabricated that have very small thermal mass (c, about 10/sup -9/ J/K) and that are suspended from the underlying silicon
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