Noncontact semiconductor wafer characterization with the terahertz Hall effect

@inproceedings{Mittleman1997NoncontactSW,
  title={Noncontact semiconductor wafer characterization with the terahertz Hall effect},
  author={Daniel M. Mittleman and J. E. Cunningham and M. C. Nussb},
  year={1997}
}
We demonstrate noncontact measurements of the Hall mobility of doped semiconductor wafers with roughly 250mm spatial resolution, using polarization rotation of focused beams of terahertz ~THz! radiation in the presence of a static magnetic field. Quantitative and independent images of both carrier density and mobility of a doped semiconductor wafer have been obtained. © 1997 American Institute of Physics. @S0003-6951 ~97!01427-7# 
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