Noncollinear spintronics and electric-field control: a review

  title={Noncollinear spintronics and electric-field control: a review},
  author={Peishan Qin and Han Yan and Xiaoning Wang and Zexin Feng and Hui Guo and Xiaorong Zhou and Hao-Jiang Wu and Xin Zhang and Zhaoguogang Leng and Hongyu Chen and Zhiqi Liu},
  journal={Rare Metals},
Abstract Our world is composed of various materials with different structures, where spin structures have been playing a pivotal role in spintronic devices of the contemporary information technology. Apart from conventional collinear spin materials such as collinear ferromagnets and collinear antiferromagnetically coupled materials, noncollinear spintronic materials have emerged as hot spots of research attention due to exotic physical phenomena. In this review, we first introduce two types of… 

Electric field manipulation of magnetic skyrmions

Magnetic skyrmions are vortex-like swirling spin textures that are promising candidates for carrying information bits in future magnetic memories or logic circuits. To build skyrmionic devices,

An overview of SrRuO3-based heterostructures for spintronic and topological phenomena

SrRuO3 (SRO)-based heterostructures have attracted much attention for potential applications such as electrodes, oxide spintronics, topological electronics and electrocatalytic function mainly due to

Abnormal low-field M-type magnetoresistance in hexagonal noncollinear ferromagnetic MnFeGe alloy

The new magnetic degree of freedom provided by the noncollinear structure plays an important role in the development of spintronic devices. In this work, we conducted a systematic study on the

Generation and manipulation of skyrmions and other topological spin structures with rare metals

Skyrmions are nano-scale quasi-particles with topological protection, which have potential applications in next-generation spintronics-based information storage. Numerous papers have been published

Materials challenges for SrRuO3: From conventional to quantum electronics

The need for faster and more miniaturized electronics is challenging scientists to develop novel forms of electronics based on quantum degrees of freedom different from electron charge. In this

Skyrmion-(non)crystal structure stabilized by dipolar interaction

We report a numerical study on the role of long-range dipolar interaction played on the creation and stabilization of skyrmion-(non)crystal structure in chiral ferromagnetic thin films without any

Dzyaloshinsky–Moriya interaction (DMI)-induced magnetic skyrmion materials

A magnetic skyrmion is a particle-like spin swirling object with a nontrivial topology that holds great promise for next-generation information carriers in high-performance spintronic devices. It was

Challenges in identifying chiral spin textures via the topological Hall effect

Chiral spin textures such as skyrmions are of interest to the field of spintronics for their potential use in future computing devices. Hall effect measurements are a simple and powerful method to

Functional antiferromagnets for potential applications on high-density storage and high frequency

Antiferromagnets have drawn increasing attention in the last decade, for their advantages such as no stray field and ultrafast spin dynamics, giving rise to potential applications on high-density



Electric-field control of anomalous and topological Hall effects in oxide bilayer thin films

It is demonstrated that both anomalous and topological Hall effects can be modulated by electric fields in oxide heterostructures consisting of ferromagnetic SrRuO3 and nonmagnetic SrIrO3.

Spin-Polarized Current in Noncollinear Antiferromagnets.

It is shown that the same mechanism that leads to the spin-polarized current also leads to a transverse spin current, which has a distinct symmetry and origin from the conventional spin Hall effect.

Spin Hall effect emerging from a noncollinear magnetic lattice without spin–orbit coupling

The spin Hall effect (SHE), which converts a charge current into a transverse spin current, has long been believed to be a phenomenon induced by spin–orbit coupling. Here, we identify an alternative

Antiferromagnetic Piezospintronics

Antiferromagnets naturally exhibit three obvious advantages over ferromagnets for memory device applications: insensitivity to external magnetic fields, much faster spin dynamics (≈THz), and higher

A piezoelectric, strain-controlled antiferromagnetic memory insensitive to magnetic fields

An antiferromagnetic memory with piezoelectric strain control can be operated in high magnetic fields and combines a small device footprint with low switching power and has the potential for low-energy and high-density memory applications.

Electric‐Field Control of Magnetic Order: From FeRh to Topological Antiferromagnetic Spintronics

Using an electric field instead of an electric current (or a magnetic field) to tailor the electronic properties of magnetic materials is promising for realizing ultralow‐energy‐consuming memory

Ambipolar ferromagnetism by electrostatic doping of a manganite

Complex-oxide materials exhibit physical properties that involve the interplay of charge and spin degrees of freedom. However, an ambipolar oxide that is able to exhibit both electron-doped and

Spin chirality fluctuation in two-dimensional ferromagnets with perpendicular magnetic anisotropy

Evidence of spin chirality fluctuations is reported by probing the THE above the Curie temperature in two different ferromagnetic ultra-thin films, SrRuO3 and V-doped Sb2Te3, and it is suggested that spin chiral fluctuations are a common phenomenon in two-dimensional ferromagnets with perpendicular magnetic anisotropy.

Characterization and Manipulation of Spin Orbit Torque in Magnetic Heterostructures

It is shown that SOT in magnetic heterostructures can be manipulated via various material engineering approaches and advance the understanding of SOT and provide novel approaches toward energy-efficient spintronic devices.