Nonballistic spin-field-effect transistor.

  title={Nonballistic spin-field-effect transistor.},
  author={John Schliemann and J. Carlos Egues and Daniel Loss},
  journal={Physical review letters},
  volume={90 14},
We propose a spin-field-effect transistor based on spin-orbit coupling of both the Rashba and the Dresselhaus types. Different from earlier proposals, spin transport through our device is tolerant against spin-independent scattering processes. Hence the requirement of strictly ballistic transport can be relaxed. This follows from a unique interplay between the Dresselhaus and the Rashba coupling; these can be tuned to have equal strengths, leading to k-independent eigenspinors even in two… CONTINUE READING
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