Non-volatile data storage in HfO2-based ferroelectric FETs

@article{Schroeder2013NonvolatileDS,
  title={Non-volatile data storage in HfO2-based ferroelectric FETs},
  author={Uwe Schroeder and E. Yurchuk and Samuel M{\"u}ller and Johannes C. M{\"u}ller and Stefan Slesazeck and Tobias Schloesser and Martin Trentzsch and Thomas Mikolajick},
  journal={2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings},
  year={2013},
  pages={60-63}
}
The ferroelectric behavior of capacitors based on hafnium oxide dielectrics is reported. Thin films of 7-30 nm thickness were found to exhibit ferroelectric polarization-voltage hysteresis loops when integrated into TiN-based metal-insulator-metal capacitors. A remanent polarization up to 25 μC/cm2 and a coercive field of about 1 MV/cm was observed when Si:HfO2 was used as a ferroelectric material. Switching times of 10 ns were demonstrated and the ferroelectric properties were verified in the… CONTINUE READING