Non-volatile and volatile bipolar resistive electrical switching in Ag and Cu chalcogenide memories with a dedicated switching layer

We report on the realisation of bipolar resistive electrical switching in memories based on inorganic solid ionic conductors, where the switching is localized in a dedicated switching layer. The switching mechanism is the electrochemical formation of a conductive metallic filament that bridges an insulating switching layer (ON state) and its reversible… CONTINUE READING