Non-traditional, non-volatile memory based on switching and retention phenomena in polymeric thin films

@article{Krieger2004NontraditionalNM,
  title={Non-traditional, non-volatile memory based on switching and retention phenomena in polymeric thin films},
  author={J. Krieger and S. Spitzer},
  journal={Proceedings. 2004 IEEE Computational Systems Bioinformatics Conference},
  year={2004},
  pages={121-124}
}
  • J. Krieger, S. Spitzer
  • Published 2004
  • Materials Science
  • Proceedings. 2004 IEEE Computational Systems Bioinformatics Conference
During the last few years significant efforts have been undertaken in the search to understand the physical principles and to realize and implement the "universal memory". This is an idealization, which would combine high-speed recording and erasing (dynamic memory) and long retention time (non-volatile memory) into one memory. Our view of the ideal memory cell is a two terminal device, which consists of two electrodes with the active layer(s) between them. The material of the active layer must… Expand

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References

SHOWING 1-10 OF 16 REFERENCES
Ferroelectric memories.
TLDR
The switching kinetics of ferroelectric thin-film memories, 100 to 300 nanometers thick, are now well understood, with switching times that fit an activation field dependence that scales applied field and temperature. Expand
Flash memory cells-an overview
TLDR
Basic operations and charge-injection mechanisms that are most commonly used in actual flash memory cells are reviewed to provide an understanding of the underlying physics and principles in order to appreciate the large number of device structures, processing technologies, and circuit designs presented in the literature. Expand
Molecular analogue memory cell based on electrical switching and memory in molecular thin films
Abstract The structure of a molecular memory cell with its work based on the phenomenon of structural instability of one-dimensional conductive molecular systems is offered. ElectrophysicalExpand
Submicron spin valve magnetoresistive random access memory cell
Spin valve magnetoresistive random access memory cells with widths varying from 1.5 to 0.25 μm and an aspect ratio of length/width more than 10 were fabricated and tested. In general, the switchingExpand
Reversible Electrical Switching Phenomena in Disordered Structures
We describe here a rapid and reversible transition between a highly resistive and a conductive state effected by an electric field which we have observed in various types of disordered materials,Expand
Copper-ion conducting solid-polymer electrolytes based on polyacrylonitrile (PAN)
Two copper-ion conducting solid-polymer electrolyte systems based on polyacrylonitrile (PAN) have been synthesized and characterized using DC polarization tests and impedance measurements. The systemExpand
Structural instability of one-dimensional systems as a physical principle underlying the functioning of molecular electronic devices
Structural instability of one-dimensional conducting molecular systems is suggested as a physical principle underlying the operation of molecular electronic devices, and its potential application inExpand
Handbook of Solid State Batteries and Capacitors
Mathematical Modelling of Solid State Power Sources (J-Y Chern) Silver Ion Conducting Electrolytes (T Takahashi) Copper Ion Conducting Electrolytes (R Linford) Reliability and Clinical Assessment ofExpand
Bistable switching in electroformed metal–insulator–metal devices†
Revue des systemes de commutation representatifs et discussion detaillee d'une classe particuliere de ces systemes non identifiee correctement dans le passe. On presente les avantages de diodesExpand
Collapse of quantized conductance in a dirty Tomonaga-Luttinger liquid.
TLDR
It is shown that quantization of conductance is realized for short wires, while for longer wires the effect of impurity scattering is important and a deviation from the quantized value becomes apparent especially at low temperatures. Expand
...
1
2
...