Non-traditional, non-volatile memory based on switching and retention phenomena in polymeric thin films

  title={Non-traditional, non-volatile memory based on switching and retention phenomena in polymeric thin films},
  author={Ju. H. Krieger and Stuart Spitzer},
  journal={Proceedings. 2004 IEEE Computational Systems Bioinformatics Conference},
  • J. Krieger, S. Spitzer
  • Published 15 November 2004
  • Materials Science
  • Proceedings. 2004 IEEE Computational Systems Bioinformatics Conference
During the last few years significant efforts have been undertaken in the search to understand the physical principles and to realize and implement the "universal memory". This is an idealization, which would combine high-speed recording and erasing (dynamic memory) and long retention time (non-volatile memory) into one memory. Our view of the ideal memory cell is a two terminal device, which consists of two electrodes with the active layer(s) between them. The material of the active layer must… 

Figures from this paper

Fast transients in non-volatile resistive memories (RRAM) using tantalum pentoxide as solid electrolyte


Review Paper on Memristor MOS Content Addressable Memory

This paper provides a review on the various memory devices and basic introduction of the proposed Memristor based content addressable memory (CAM) for future high performance search engine using VLSI technology.

Impact of electrolyte deposition technique on resistive Pt/Ta2O5/Cu switch performance

Resistive memory is being considered for next-generation non-volatile memory due to the inherent simplicity, scalability and low cost [1, 2]. Additionally, these devices show potential to replace

Memristor-CNTFET based ternary logic gates

Memristor-Based Computing Architecture: Design Methodologies and Circuit Techniques

This project first investigated the memristor-based synapse design and the corresponding training scheme, then the design optimization and its implementation in multi-synapse systems were analyzed too, and a case study of an arithmetic logic unit was designed to demonstrate the hardware implementation of a reconfigurable system built based on Memristor synapses.

Nanoionics: New materials and supercapacitors

The review presents the results of investigations of solid state nanomaterials and nanosystems with fast ion transport developed at the IMT RAS. The concept of a new branch of science, “nanoionics”,

A Memristive System Based on an Electrostatic Loudspeaker

Simulation results show that the device based on the combination of an electrostatic loudspeaker and a strain gauge has all the properties of the memristive systems.

Memristive properties of solar cells based on perovskite and polymer composite

Organic-inorganic halide perovskites recently have emerged as a perspective material for using in solar cells. This material has many perspective properties, one of them is the ion migration. Modern

On the implementation of audio envelope generators with memristor-based circuits

  • Francesca Ortolani
  • Computer Science
    2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO)
  • 2017
It is possible to exploit the delayed switching property of memristor to realize long delays without the need of big capacitors in the implementation of envelope generators.



Ferroelectric memories.

The switching kinetics of ferroelectric thin-film memories, 100 to 300 nanometers thick, are now well understood, with switching times that fit an activation field dependence that scales applied field and temperature.

Flash memory cells-an overview

Basic operations and charge-injection mechanisms that are most commonly used in actual flash memory cells are reviewed to provide an understanding of the underlying physics and principles in order to appreciate the large number of device structures, processing technologies, and circuit designs presented in the literature.

Reversible Electrical Switching Phenomena in Disordered Structures

We describe here a rapid and reversible transition between a highly resistive and a conductive state effected by an electric field which we have observed in various types of disordered materials,

Structural instability of one-dimensional systems as a physical principle underlying the functioning of molecular electronic devices

Structural instability of one-dimensional conducting molecular systems is suggested as a physical principle underlying the operation of molecular electronic devices, and its potential application in

Handbook of Solid State Batteries and Capacitors

Mathematical Modelling of Solid State Power Sources (J-Y Chern) Silver Ion Conducting Electrolytes (T Takahashi) Copper Ion Conducting Electrolytes (R Linford) Reliability and Clinical Assessment of

Bistable switching in electroformed metal–insulator–metal devices†

Revue des systemes de commutation representatifs et discussion detaillee d'une classe particuliere de ces systemes non identifiee correctement dans le passe. On presente les avantages de diodes

Collapse of quantized conductance in a dirty Tomonaga-Luttinger liquid.

It is shown that quantization of conductance is realized for short wires, while for longer wires the effect of impurity scattering is important and a deviation from the quantized value becomes apparent especially at low temperatures.

Submicron spin valve magnetoresistive random access memory cell

Spin valve magnetoresistive random access memory cells with widths varying from 1.5 to 0.25 μm and an aspect ratio of length/width more than 10 were fabricated and tested. In general, the switching