Non-equilibrium Green’s function analysis of cross section and channel length dependence of phonon scattering and its impact on the performance of Si nanowire field effect transistors

@inproceedings{Aldegunde2011NonequilibriumGF,
  title={Non-equilibrium Green’s function analysis of cross section and channel length dependence of phonon scattering and its impact on the performance of Si nanowire field effect transistors},
  author={Manuel Aldegunde and Antonio Gallardo Mart{\'i}nez and A. Asenov},
  year={2011}
}
In this paper, we study the effect of phonon scattering in silicon nanowire field effect transistors (NWFET) using a Non-equilibrium Green’s function formalism in the effective mass approximation. The effect of electron-phonon scattering on the current voltage characteristics at high and low drain bias is investigated in detail. A wide range of cross-sections (from 2.2 × 2.2 to 6.2 × 6.2 nm2) and channel lengths (from 6 to 40 nm) are considered. The impact of phonon scattering on the electron… CONTINUE READING

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