Noise temperature estimates for a next generation very large microwave array [HEMT LNAs]

@article{Weinreb1998NoiseTE,
  title={Noise temperature estimates for a next generation very large microwave array [HEMT LNAs]},
  author={Sander Weinreb},
  journal={1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192)},
  year={1998},
  volume={2},
  pages={673-676 vol.2}
}
  • Sander Weinreb
  • Published 1998 in
    1998 IEEE MTT-S International Microwave Symposium…
This paper estimates the noise temperature as a function of frequency for amplifiers covering the 1 to 10 GHz range utilizing state-of-the-art HEMT transistors operating at temperatures of 300 K, 80 K, and 20 K. The analysis includes the effect of loss and bandwidth of the input matching network. 

References

Publications referenced by this paper.
Showing 1-2 of 2 references

hdodeling of Noise Parameters of MESFET’s and MODFET’s and Their Frequency and Temperature Dependence,

  • M. Pospieszalski
  • IEEE MTT Trans.,
  • 1989

Millimeter - Wave CryogenicallyCoolable Amplifiers Using AlInAs / GaInAs / InP HEMT ’ s Status of InP HEMT Technology for Microwave Receiver Applications

  • M. Pospieszalski

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