Noise analysis of NPN SOI bipolar transistors for the design of charge measuring systems

@article{Manghisoni2003NoiseAO,
  title={Noise analysis of NPN SOI bipolar transistors for the design of charge measuring systems},
  author={Massimo Manghisoni and Lodovico Ratti and Valerio Re and Valeria Speziali and Gianluca Traversi and G. Fallica and Stefano Leonardi},
  journal={IEEE Transactions on Nuclear Science},
  year={2003},
  volume={51},
  pages={980-986}
}
This paper is concerned with the analysis of the noise properties of NPN bipolar junction transistors fabricated in a monolithic technology. Such devices are part of a BiCMOS silicon on insulator process, whose suitability for radiation hard applications is being evaluated. A thorough noise characterization, including series and parallel contribution… CONTINUE READING