Noise Characteristics of 0.5 μm/50 GHz Si and 0.5 μm/70 GHz SiGe Bipolar Technologies

@article{Aufinger1999NoiseCO,
  title={Noise Characteristics of 0.5 μm/50 GHz Si and 0.5 μm/70 GHz SiGe Bipolar Technologies},
  author={Klaus Aufinger and Herbert Knapp and Reinhard Gabl and T. F. Meister and Josef Bock and Herbert Schafer and Martin. Pohl and L. Treitinger},
  journal={1999 29th European Microwave Conference},
  year={1999},
  volume={2},
  pages={129-132}
}
This paper presents the noise characteristics of 0.5 μm / 50 GHz Si [8] and 0.5 μm / 70 GHz SiGe [5] bipolar transistors. High-frequency (HF) noise characteristics are shown and compared. Observed similarities and differences are discussed. Low-frequency (LF) noise characteristics are used to extract LF noise model parameters. The corresponding noise… CONTINUE READING