No image lag photodiode structure in the interline CCD image sensor

@article{Teranishi1982NoIL,
  title={No image lag photodiode structure in the interline CCD image sensor},
  author={Nobukazu Teranishi and A. Kohono and Yasuo Ishihara and E. Oda and K. Arai},
  journal={1982 International Electron Devices Meeting},
  year={1982},
  pages={324-327}
}
An undesirable image lag with a long time constant was found in the interline CCD image sensor having N+P-junction photodiode (PD). This paper clarifies the image lag mechanism and proposes a new photodiode structure having no image lag. The image lag measurement method and the experimental results are also given. The experimental results quantitatively agreed with the analytical model, in which signal electrons are assumed to be transferred from the PD to the vertical CCD as a small… 

Figures from this paper

A 1/2-in. CCD image sensor overlaid with a hydrogenated amorphous silicon

A half-inch size CCD image sensor overlaid with a hydrogen-erated amorphous silicon (α-Si:H) as a photodetector has been developed. The array consists of 506V × 404H picture elements. The

A 1/3-in interline transfer CCD image sensor with a negative-feedback-type charge detector

The authors describe an interline transfer charge coupled device (CCD) area image sensor with 94-dB dynamic range and 1.0-electron RMS noise charge detector. With a new capacitance-coupled

Trench CCD image sensor

Simulation data is presented on the device structure, process flow, and operation of the Trench CCD (charge coupled device), which is being developed to increase the resolution of solid-state image sensors to enable improvement of CCD image sensor performance parameters other than dynamic range.

Long Exposure Time Noise in Pinned Photodiode CMOS Image Sensors

This letter focuses on a new noise source within a pinned photodiode in complimentary metal–oxide–semiconductor (CMOS) image sensors. The noise originates from the feedforward effect, which is

( Invited ) Effect and Limitation of Pinned Photodiode

The pinned photodiode (PPD) is the primary technology for image sensors and used in almost all CCD image sensors and CMOS image sensors. This paper discusses effect and limitation of PPD, especially

A 1/3-in 270000 pixel CCD image sensor

A 1/3-in interline transfer charge-coupled-device (CCD) image sensor with 270000 pixels has been developed. The effective sensing area of (4.8(H)*3.6(V)) mm/sup 2/ is adopted for the 1/3-in format.

Effect and Limitation of Pinned Photodiode

  • N. Teranishi
  • Physics
    IEEE Transactions on Electron Devices
  • 2016
The pinned photodiode (PPD) is the primary technology for image sensors and used in almost all charge-coupled device image sensors and CMOS image sensors. This paper discusses the effect and

High speed linear CCD sensors with pinned photodiode photosites

Two families of linear image sensors which incorporate pinned photodiode (PPD) photosites are described, maintaining the high quantum efficiencies associated with conventional photodiodes while allowing for large reductions in image lag and fixed pattern noise.

Development of a large pixel, spectrally optimized, pinned photodiode/interline charge coupled device (CCD) detector for the Earth Observing System (EOS)/Moderate-Resolution Imaging Spectrometer-Tilt (MODIS-T) instrument

ABSTRACT A Pinned Photodiodeflnterline CCD Detector Array is under development for the EOSJMODIS-T project. Outstanding features of the device include large pixels, spectrally optimized fill factors,

SIMULATION METHOD OF A PINNED PHOTODIODE WITH NO IMAGE LAG AND DARK CURRENT

In this paper, the simulation method of a pinned photodiode (PD) with no image lag and dark current is proposed. The pinned PD has a shallow p+ layer on top of the conventional PD to create the
...

References

SHOWING 1-2 OF 2 REFERENCES

Interline CCD image sensor with an antiblooming structure

A ⅔-in 384 (H) × 490 (V) element interline CCD image sensor with a new antiblooming structure was developed. Blooming was suppressed without sacrificing photosensitivity and dynamic range by means of

Ion-implanted complementary MOS transistors in low-voltage circuits

Simple but reasonably accurate equations are derived which describe MOS transistor operation in the weak inversion region near turn-on. These equations are used to find the transfer characteristics