Nitrogen-doped, boron-doped and undoped multiwalled carbon nanotube/polymer composites in WORM memory devices.

Abstract

We report the preparation of write-once-read-many times memory devices using composites of carbon nanotubes and poly(vinyl phenol) sandwiched between Al electrodes. Three types of nanotubes (undoped multiwalled carbon nanotubes, nitrogen-doped multiwalled carbon nanotubes and boron-doped multiwalled carbon nanotubes) are investigated for this application. The OFF to ON state switching threshold is only slightly dependent on nanotube type, but the ON/OFF current ratio depends on both nanotube type and concentration and varies up to 10(6), decreasing for nanotube concentrations larger than 0.50 wt% in the composite.

DOI: 10.1088/0957-4484/24/12/125203

Cite this paper

@article{Mamo2013NitrogendopedBA, title={Nitrogen-doped, boron-doped and undoped multiwalled carbon nanotube/polymer composites in WORM memory devices.}, author={Messai A Mamo and Alan O Sustaita and Zikhona N Tetana and Neil J. Coville and I . A . H{\"{u}mmelgen}, journal={Nanotechnology}, year={2013}, volume={24 12}, pages={125203} }