Nitridation of silicon-dioxide films grown on 6H silicon carbide

This letter addresses the question of why it is possible to grow high-quality oxide films on N-type but not on P-type SiC. It provides results which indicate that the oxide/SiC interface would be inferior to the oxide/Si interface for both N-type and P-type SiC, if it were not for the beneficial effects of nitrogen incorporation. The letter presents, for… CONTINUE READING