Nitridation kinetics of tungsten films at low temperature with reactive neutrals generated from a N2 multipolar discharge

@inproceedings{Bosseboeuf1993NitridationKO,
  title={Nitridation kinetics of tungsten films at low temperature with reactive neutrals generated from a N2 multipolar discharge},
  author={A. Bosseboeuf and S. Kianfar and Francois Meyer},
  year={1993}
}
Abstract The mechanisms of nitridation of W films by reactive nitrogen neutrals generated form a N 2 multipolar discharge are studied by in situ AES and ex situ NRA in the temperature range 35–500°C. The growth is mainly due to atomic nitrogen and occurs in two steps at room temperature. At higher temperature the nitridation is less effective due to a decrease of the initial sticking coefficient of N on W.