Nickel Germanosilicide contacts formed on heavily boron doped Si/sub 1-x/Ge/sub x/ source/drain junctions for nanoscale CMOS

@article{Liu2005NickelGC,
  title={Nickel Germanosilicide contacts formed on heavily boron doped Si/sub 1-x/Ge/sub x/ source/drain junctions for nanoscale CMOS},
  author={Jing Liu and M. Ozturk},
  journal={IEEE Transactions on Electron Devices},
  year={2005},
  volume={52},
  pages={1535-1540}
}
Formation of source/drain junctions with a small parasitic series resistance is one of the key challenges for CMOS technology nodes beyond 100 nm. A new source/drain technology based on selective deposition of heavily in situ doped Si/sub 1-x/Ge/sub x/ layers was recently developed in this laboratory. This paper presents formation and structural characterization of self-aligned nickel germanosilicide contacts formed on heavily boron doped Si/sub 1-x/Ge/sub x/ alloys. The results show that thin… CONTINUE READING
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