Ni silicide and Ni germanosilicide self-aligned process for 65nm and beyond CMOS technology by 2-step rapid thermal annealing

Abstract

Ni silicide and germanosilicide formation with one-step and two-step rapid thermal annealing are compared in this study. The 1st annealing temperature for NiSi and Ni(Si/sub 1-x/Ge/sub x/) in two-step annealing process are investigated with sheet resistance measurements, X-ray diffraction and Auger election spectroscopy. Cross-sectional SEM shows the influence of rapid thennal annealing process on the uniformity of NiSi and Ni(Si/sub 1-x/Ge/sub x/) films. Two-step annealing process was found to improve the uniformity of NiSi and Ni(Si/sub 1-x/Ge/sub x/) films. The results indicate that two-step annealing process would be preferred for NiSi or Ni(Si/sub 1-x/Ge/sub x/) formation on the ultra-shallow junction in the future CMOS technology nodes.

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Cite this paper

@article{Mo2004NiSA, title={Ni silicide and Ni germanosilicide self-aligned process for 65nm and beyond CMOS technology by 2-step rapid thermal annealing}, author={Hongxiang Mo and Pietro Bonfanti and Bei Zhu and Danying Gao and Hanming Wu and J. Chen and Hui-Zhen Wu and Yu-Long Jiang and Guo-Ping Ru and F-R. Chen}, journal={Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.}, year={2004}, volume={1}, pages={464-467 vol.1} }