Next generation bulk FinFET devices and their benefits for ESD robustness

@article{Griffoni2009NextGB,
  title={Next generation bulk FinFET devices and their benefits for ESD robustness},
  author={Alessio Griffoni and Steven Thijs and Christian Russ and David Tr{\'e}mouilles and Dimitri Linten and Mirko Scholz and Nadine Collaert and Liesbeth Witters and Gaudenzio Meneghesso and Guido Groeseneken},
  journal={2009 31st EOS/ESD Symposium},
  year={2009},
  pages={1-10}
}
This paper reports the first ESD results on NMOS and gated diode devices processed in a bulk FinFET technology. A comparison with SOI FinFET performance is carried out, highlighting the role of device geometry and three-dimensional architecture. Moreover, the ESD-RF performance of bulk FinFET gated diodes is evaluated and compared to SOI. 
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NMOSFET ESD Self-Protection Strategy and Underlying Failure Mechanism in Advanced 0.13-μm CMOS Technology

  • A. Salman
  • IEEE Trans. Device and Materials Reliability,
  • 2002
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