Next generation 1.5 microm terahertz antennas: mesa-structuring of InGaAs/InAlAs photoconductive layers.

Abstract

Mesa-structuring of InGaAs/InAlAs photoconductive layers is performed employing a chemical assisted ion beam etching (CAIBE) process. Terahertz photoconductive antennas for 1.5 microm operation are fabricated and evaluated in a time domain spectrometer. Order-of-magnitude improvements versus planar antennas are demonstrated in terms of emitter power, dark current and receiver sensitivity.

DOI: 10.1364/OE.18.002296

Cite this paper

@article{Roehle2010NextG1, title={Next generation 1.5 microm terahertz antennas: mesa-structuring of InGaAs/InAlAs photoconductive layers.}, author={Helmut Roehle and Roman J B Dietz and Hartmut Hensel and Joachim B{\"{o}ttcher and Harald K{\"{u}nzel and Dennis Stanze and Martin Schell and Bernd Sartorius}, journal={Optics express}, year={2010}, volume={18 3}, pages={2296-301} }