New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions

@article{Barlini2006NewTF,
  title={New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions},
  author={Davide Barlini and Mauro Ciappa and Alberto Castellazzi and Michel Mermet-Guyennet and Wolfgang Fichtner},
  journal={Microelectronics Reliability},
  year={2006},
  volume={46},
  pages={1772-1777}
}
A novel technique is presented, which uses dIce/dt and the transconductance as a thermo-sensitive parameter for the measurement of the static and of the transient average junction temperature in IGBT devices. The paper describes the physics of the signal generation, provides the experimental setup, and discusses the accuracy and the suitability of the technique under operating conditions of the devices. 
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