New sub-20nm transistors: why and how

Abstract

Two new MOSFET structures are candidates for sub-20nm IC technologies according to International Technology Roadmap for Semiconductors. FinFET and UTB-SOI transistors are poised to replace today' s MOSFETs and will provide much needed relief to ICs from their power and device variation predicaments.

DOI: 10.1145/2024724.2024832

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Cite this paper

@inproceedings{Hu2011NewST, title={New sub-20nm transistors: why and how}, author={Chenming Hu}, booktitle={DAC}, year={2011} }