New observations on the random telegraph noise induced Vth variation in nano-scale MOSFETs

@article{Liu2014NewOO,
  title={New observations on the random telegraph noise induced Vth variation in nano-scale MOSFETs},
  author={Changze Liu and Kyong Taek Lee and Hyunwoo Lee and Yoohwan Kim and Sangwoo Pae and Jongwoo Park},
  journal={2014 IEEE International Reliability Physics Symposium},
  year={2014},
  pages={XT.17.1-XT.17.5}
}
In this paper, random telegraph noise (RTN) induced ΔVth variation under the worst bias condition is experimentally investigated. The results show that ΔVth significantly increases with the gate bias, which confirms that RTN amplitude should be evaluated and modeled under full bias swing. Moreover, the impacts of BTI aging on RTN are further studied. The experimental results show that RTN amplitude after aging is still at the same range as that under “time zero” condition. For the device size… CONTINUE READING

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