New method of Plasma doping with in-situ Helium pre-amorphization

@inproceedings{Sasaki2005NewMO,
  title={New method of Plasma doping with in-situ Helium pre-amorphization},
  author={Yasuhiro Sasaki and Cheng-guo Jin and Katsumi Okashita and Hideki Tamura and Hiroyuki Ito and Noritaka Mizuno and H. Sauddin and Rieko Higaki and Taku Satoh and Kazuhiko Majima and Yasuhiro Nishio-shi Fukagawa and Ken-ichi Takagi and I. Aiba and Shun-ichiro Ohmi and Kazuo Tsutsui and Hiroshi Iwai},
  year={2005}
}
Abstract A new method of plasma doping process was developed to achieve the ultra shallow junction with low sheet resistance ( R s ) and very steep abruptness. In-situ Helium pre-amorphization (He-PA) was employed in conjunction with plasma doping (PD) of dopant species. The optical absorption rate of the amorphous Si layer and the junction depth ( X j ) were predominantly controlled by the He-PA conditions. The increase in the optical absorption of the shallow doped layer enabled the high… CONTINUE READING

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