New insights into carrier transport in n-MOSFETs

  title={New insights into carrier transport in n-MOSFETs},
  author={Anthony Lochtefeld and Ihsan J. Djomehri and Ganesh Samudra and Dimitri A. Antoniadis},
  journal={IBM Journal of Research and Development},
This paper discusses recent experimental investigations of the relation between lowfield effective mobility and effective injection velocity of electrons from the source into the channel, as manifested in current drive, of deeply scaled n-MOSFETs. It is first established that the effective velocity in electrostatically sound, “well-tempered” scaled devices, for example with drain-induced barrier lowering (DIBL) limited to 120 mV/V, is well below the theoretical fully ballistic injection… CONTINUE READING
Highly Cited
This paper has 22 citations. REVIEW CITATIONS


Publications citing this paper.
Showing 1-10 of 17 extracted citations


Publications referenced by this paper.
Showing 1-10 of 33 references

How Close to the Thermal Limit?,” IEEE Electron Device Lett

  • A. Lochtefeld, D. Antoniadis, “On Experimental Determination of Carrier Velocity in NMOS
  • 22, 96-97
  • 2001
2 Excerpts

Measurements and Implications on the Performance of Ultra-Short MOSFETs,” IEDM Tech

  • D. Esseni, M. Mastrapasqua, +6 authors P-MOSFETs
  • Digest, p. 671
  • 2000
1 Excerpt

Performance Degradation of Small Silicon Devices Caused by Long-Range Coulomb Interactions,

  • M. Fischetti, S. Laux
  • Appl. Phys. Lett. 76,
  • 2000
1 Excerpt

Modeling On-Currents for n-MOSFETs: Ultimate Limits vs. the NTRS,

  • F. Assad, Z. Ren, D. Vasileska, S. Datta, M. Lundstrom
  • Proceedings of the 1999 International Conference…
  • 1999
1 Excerpt

A New Inverse-Modeling-Based Technique for Sub-100-nm MOSFET Characterization,

  • Z. Lee
  • Doctoral Dissertation, Massachusetts Institute of…
  • 1998
2 Excerpts

Similar Papers

Loading similar papers…