New insights into carrier transport in n-MOSFETs

@article{Lochtefeld2002NewII,
  title={New insights into carrier transport in n-MOSFETs},
  author={Anthony Lochtefeld and Ihsan J. Djomehri and Ganesh Samudra and Dimitri A. Antoniadis},
  journal={IBM Journal of Research and Development},
  year={2002},
  volume={46},
  pages={347-358}
}
This paper discusses recent experimental investigations of the relation between lowfield effective mobility and effective injection velocity of electrons from the source into the channel, as manifested in current drive, of deeply scaled n-MOSFETs. It is first established that the effective velocity in electrostatically sound, “well-tempered” scaled devices, for example with drain-induced barrier lowering (DIBL) limited to 120 mV/V, is well below the theoretical fully ballistic injection… CONTINUE READING
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