New high voltage ESD protection devices based on bipolar transistors for automotive applications

@article{Gendron2011NewHV,
  title={New high voltage ESD protection devices based on bipolar transistors for automotive applications},
  author={A. Jeffrey Gendron and Chai Ean Gill and Carol Rouying Zhan and Mike Kaneshiro and Bill Cowden and Changsoo Hong and Rohmawati Ida and Dung T. Nguyen},
  journal={EOS/ESD Symposium Proceedings},
  year={2011},
  pages={1-10}
}
A novel ESD protection based on thyristor-like coupled NPN and PNP transistors is presented. This protection is developed in a 0.25 μm SmartMOS® technology targeting 10 to 65 Volts IO pins. TCAD simulations are leveraged to analyze the physical behavior and a comprehensive qualification for automotive applications is presented, including HBM, MM and gun robustness measurements, transient voltage overshoot characterization in TLP, very fast TLP characterization and DC tests from −40 to 175 °C… CONTINUE READING

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A Method for Characterizing the DPI Immunity of an ESD Clamp”, in Proc

  • R. Ida, M. Majerus, C. Gill
  • IEW
  • 2011
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