New fundamental insights into capacitance modeling of laterally nonuniform MOS devices

@article{Aarts2006NewFI,
  title={New fundamental insights into capacitance modeling of laterally nonuniform MOS devices},
  author={A. C. T. Aarts and R. van der Hout and J.C.J. Paasschens and A. J. Scholten and M. Willemsen and D. B. M. Klaassen},
  journal={IEEE Transactions on Electron Devices},
  year={2006},
  volume={53},
  pages={270-278}
}
In compact transistor modeling for circuit simulation, the capacitances of conventional MOS devices are commonly determined as the derivatives of terminal charges, which in their turn are obtained from the so-called Ward-Dutton charge partitioning scheme. For devices with a laterally nonuniform channel doping profile, however, it is shown in this paper that no terminal charges exist from which the capacitances can be derived. Instead, for such devices, a new model is presented for the… CONTINUE READING
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