New effects of trench isolated transistor using side-wall gates

  title={New effects of trench isolated transistor using side-wall gates},
  author={K. Hieda and F. Horiguchi and H. Watanabe and K. Sunouchi and I. Inoue and T. Hamamoto},
  journal={1987 International Electron Devices Meeting},
  • K. Hieda, F. Horiguchi, +3 authors T. Hamamoto
  • Published 1987
  • Materials Science
  • 1987 International Electron Devices Meeting
  • In order to realize a high performance switching transistor, a new trench isolated transistor with side-wall gates has been developed. In this transistor with a triple-gate structure, the side-wall of the trench is used as an extra-channel region. The new effects of trench isolated transistor with a triple-gate structure have been described. The advantages of this transistor are excellent cutoff characteristics, a small substrate bias effect and high reliability characteristics. It is found… CONTINUE READING
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