New architectures for deep submicron MOSFETs

  title={New architectures for deep submicron MOSFETs},
  author={Kristin De Meyer and S. Biesemans and N.. Collaert and S. Kubicek and Peter Verheyen},
  journal={28th European Solid-State Device Research Conference},
In scaling down MOSFETs to deep submicron gate lengths, the basic limitations are twofold. The first one is from a physical origin and related to short channel effects ( seE ) and hot carrier degradation. The second limitation is technology related and more specifically to dopant redistribution and lithography. In this paper the classical device… CONTINUE READING