New Power MOSFET Employing Segmented Trench Body Contact for Improving the Avalanche Energy

@article{Ji2008NewPM,
  title={New Power MOSFET Employing Segmented Trench Body Contact for Improving the Avalanche Energy},
  author={In-Hwan Ji and Kyu-Heon Cho and Min-Koo Han and Seung-Chul Lee and Soo-Seong Kim and Kwang-Hoon Oh and Chong-Man Yun},
  journal={2008 20th International Symposium on Power Semiconductor Devices and IC's},
  year={2008},
  pages={115-118}
}
We have fabricated the 60 V power MOSFET employing the segmented trench body contact which results in low conduction loss and high avalanche energy (EAS) under undamped inductive switching (UIS) condition without sacrificing the device area. The proposed device employs the CMOS compatible deep Si trench process. The segmented trench body contact suppresses the hole current beneath the n+ source region under the avalanche breakdown mode because the impact ionization begins at the bottom of the… CONTINUE READING
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